Large current intensities of micro-ampere magnitude with Coulomb blockade in I-V curves of nanowire MOSFET devices were analyzed. The phenomena was formed by nanowire crystal because of crystal deformed structure. Single electron tunnels with some electron copula in the island, which make the charging energy become large. When electron tunnels in island with coupling electron pair with increasing gate voltage, the coulomb blockade effect with large current intensities are observed at room temperature.