With ZnAl2O4 ceramic target adopted as the sputtering source, Al2O3 doped ZnO (AZO) transparent conductive films are deposited on quartz substrate by RF magnetron sputtering with an optimized preparation process of zinc oxide films. The structure and photoelectric properties of the films are characterized by X-ray diffractometer, UV-VIS spectrophotometer, film thickness gauge and Hall effect meter, followed by a study on the effects of Al2O3 doping mass fraction (1%~5%) in the target on the structure and photoelectric properties of the films. The results show that the deposited AZO films are characterized with a hexagonal wurtzite structure, which grow along the preferred orientation of the (002) crystal plane. With the increase of Al2O3 doping ratio, the band gap width of the films undergoes an initial increase and a subsequent decrease, while the resistance decreases firstly and increases subsequently. With the doping mass percentage of Al2O3 reaching 4%, the film is characterized with the best preferred orientation, the largest grain size, the highest average visible light transmittance, the lowest resistivity, and the optimized crystal quality and photoelectric properties.