By adopting density functional theory (DFT) and non-equilibrium Green's function (NEGF) method, an investigation has been made of the effects of boron and nitrogen atoms doping on the spin transport behavior of zigzag silene nanoribbon devices. It is found that the boron and nitrogen atoms are the most stable doped on the edge of the zigzag silene nanoribbons, with the doping region of boron and nitrogen atoms playing a key role in the spin transport properties of the device. When doped in the scattering region of the device, tiny spin splitting can be found. However, when doped in the electrode regions, an obvious spin-splitting effect can be detected, with a corresponding spin filtration efficiency as high as 100%.